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| FLM6472-4F FEATURES * * * * * * * High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: add = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM6472-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 25 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 7.2 GHz, f = 10 MHz 2-Tone Test Pout = 25.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 6.4 ~ 7.2 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =1100mA VDS = 5V, IDS = 85mA IGS = -85A Min. -0.5 -5.0 35.5 8.5 -44 Limit Typ. Max. 1700 2600 1700 -1.5 36.5 9.5 -3.0 Unit mA mS V V dBm dB mA % dB dBc C/W C 1100 1300 36 -46 5.0 0.6 6.0 80 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.3 August 2004 1 FLM6472-4F C-Band Internally Matched FET POWER DERATING CURVE 30 Total Power Dissipation (W) Output Power (S.C.L.) (dBm) OUTPUT POWER & IM3 vs. INPUT POWER 33 f DS7.2 GHz 1= 31 2-tone test 29 27 25 23 21 IM3 V =10V 24 18 12 6 f2 = 7.21 GHz Pout -10 IM3 (dBc) -20 -30 -40 -50 12 14 16 18 20 22 0 50 100 150 200 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Case Temperature (C) OUTPUT POWER vs. FREQUENCY 38 Output Power (dBm) OUTPUT POWER vs. INPUT POWER VDS=10V f = 6.8 GHz Pout VDS=10V P1dB 38 Pin=28dBm Output Power (dBm) 37 36 35 34 33 32 6.4 6.6 6.8 7.0 36 34 32 30 28 26 18 20 22 add 26dBm 24dBm 45 30 15 0 add (%) 22dBm 7.2 24 26 28 Frequency (GHz) Input Power (dBm) 2 FLM6472-4F C-Band Internally Matched FET S11 S22 +j100 +j50 +j25 +90 SCALE FOR |S12| 0.2 S21 S12 +j10 7.4 6.2 GHz 6.4 6.6 50 7.4 7.0 7.0 7.2 6.8 250 +j250 0.1 6.2 GHz SCALE FOR |S21| 0 25 7.2 180 4 3 2 7.4 1 6.2 GHz 6.4 6.4 0 -j10 6.8 6.6 6.4 6.2 GHz -j250 7.4 7.2 7.0 6.8 6.6 6.6 6.8 7.2 7.0 -j25 -j50 -j100 -90 FREQUENCY (MHZ) 6200 6300 6400 6500 6600 6700 6800 6900 7000 7100 7200 7300 7400 S11 MAG .355 .396 .428 .449 .460 .458 .445 .420 .377 .342 .278 .220 .207 ANG 48.9 43.1 36.4 29.2 21.2 12.5 2.9 -8.4 -21.9 -30.9 -52.6 -85.7 -133.5 S-PARAMETERS VDS = 10V, IDS = 1100mA S21 S12 MAG ANG MAG ANG 3.308 3.273 3.256 3.239 3.246 3.260 3.290 3.329 3.368 3.397 3.407 3.368 3.263 19.2 7.5 -4.3 -15.8 -27.5 -39.4 -51.6 -64.4 -77.8 -84.4 -99.3 -115.1 -131.9 .040 .044 .048 .053 .058 .062 .066 .071 .077 .079 .083 .086 .087 -30.6 -43.2 -55.5 -65.7 -75.9 -85.7 -95.6 -105.0 -115.1 -119.2 -130.0 -141.4 -153.0 S22 MAG .704 .665 .627 .586 .548 .506 .465 .429 .391 .371 .347 .338 .348 ANG -70.9 -78.3 -85.6 -93.3 -101.1 -109.8 -119.5 -130.8 -144.3 -152.3 -170.4 169.0 147.4 3 FLM6472-4F C-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.60.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.60.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.90.2 (0.508) 12.0 (0.422) 17.00.15 (0.669) 21.00.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 |
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